PART |
Description |
Maker |
SSM5G06FE |
Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
SSM5G02TU-14 |
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
SSM5G01TU |
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Planar Diode DC-DC Converter for DSCs and Camcorders
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
1SS388 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
1SS404WS |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD. SEMTECH ELECTRONICS LTD...
|
1SS369 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
CCS15S40 |
Schottky Barrier Diode Silicon Epitaxial
|
Toshiba Semiconductor
|
DSR05S30CTB |
Diode Silicon Epitaxial Schottky Barrier Type
|
Toshiba Semiconductor
|
DSR07S30U |
Diode Silicon Epitaxial Schottky Barrier Type
|
Toshiba Semiconductor
|
1SS239 |
Silicon Epitaxial Schottky Barrier Type Diode
|
ETC
|
HN20S01FU |
Silicon Epitaxial Schottky Barrier Type Diode
|
Toshiba
|
RB521S-40 |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|